IXYS Silicon Carbide (SiC) Devices
IXYS Silicon Carbide (SiC) Devices are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. IXYS focuses on developing the most reliable Silicon Carbide Semiconductor Devices available.
Features
- 2500V isolation voltage (UL recognized)
- Low thermal resistance
- High power cycling capability
- Reduces parasitic inductance and capacitance
- Allows module circuit configurations
- Half-bridge configuration
- Series connected and common anode FREDs
- MOSFET with series Schottky diode
- Replaces multiple discretes
Associated Products
IXYS Silicon Carbide (SiC) Diodes & Rectifiers
For applications where improvements in efficiency, reliability, and thermal management are desired.
Đã phát hành: 2019-10-25
| Đã cập nhật: 2025-04-23