Transistor mới
Nexperia BXK9Q29-60A N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) SMD plastic package using Trench MOSFET technology. This N-channel MOSFET is logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C. The BXK9Q29-60A trench MOSFET features a 60V maximum drain-source voltage, 84A maximum peak drain current, and 27W maximum total power dissipation. This N-channel MOSFET also features a 23.7mΩ typical drain-source on-state resistance, 25mJ maximum non-repetitive drain-source avalanche energy, and 15.8A maximum non-repetitive avalanche current. The BXK9Q29-60A trench MOSFET is EU/CN RoHS-compliant. Typical applications include LED lighting, switching circuits, and DC-DC conversion.
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Nexperia BUK9Q N-Channel Trench MOSFETLogic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.9/9/2025
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Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).7/3/2025 -
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETsNormally off e-mode devices that deliver superior performance and very low on-state resistance.7/3/2025 -
Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETsThese FETs come in TOLT, TO247, and TOLL packages and use the Gen IV Plus SuperGaN® platform.7/1/2025 -
ROHM Semiconductor Small Signal Dual Channel MOSFETsFeature low on-resistance and fast switching, and are ideal for motor drives.6/30/2025 -
Littelfuse Nguồn MOSFETs SiC 1200 V IXSJxN120R1High-performance devices designed for demanding power conversion applications.6/23/2025 -
onsemi NVMFS4C03NWFET1G Single N-Channel Power MOSFETDelivers excellent thermal performance and low RDS(on) in a compact 5mm x 6mm PowerFLAT package.6/23/2025 -
ROHM Semiconductor Automotive 40A & 80A Power MOSFETsFeature low on-resistance and are ideal for ADAS, automotive, and lighting applications.6/16/2025 -
PANJIT 50V Enhancement Mode MOSFETsThese MOSFETs have advanced Trench process technology and offer a low RDS(ON).6/9/2025 -
onsemi NVMFDx 100V Dual N-Channel Power MOSFETsFeatures low RDS(on) values and fast switching characteristics in a space-saving DFN-8 package.6/9/2025 -
ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFETCompact, high-performance MOSFET designed for low-voltage switching applications.6/4/2025 -
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETsAutomotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.6/3/2025 -
Torex Semiconductor XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETsFeatures low on-resistance, reducing energy losses and improving overall system efficiency.6/3/2025 -
Infineon Technologies CoolMOS™ CM8 650V Power MOSFETsDesigned according to the Superjunction (SJ) principle to offer low switching and conduction losses.6/3/2025 -
onsemi NXH015F120M3F1PTG Silicon Carbide (SiC) ModuleFeatures 15mΩ/1200V M3S SiC MOSFET full-bridge and a thermistor with Al2O3 DBC in an F1 package.5/23/2025 -
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFETFeatures a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.5/22/2025 -
STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBTCreated by implementing an advanced proprietary trench gate field-stop structure.5/22/2025 -
Ampleon BLF981/BLF981S LDMOS Power TransistorsDesigned for high-efficiency broadband applications across a frequency range from HF to 1400MHz.5/15/2025 -
Ampleon BLP981 LDMOS Power Transistor170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.5/15/2025 -
Wolfspeed YM Six-Pack Silicon Carbide Power ModulesAutomotive-qualified modules that are designed for seamless design integration and durability.5/14/2025 -
onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFETEngineered to handle high currents, which is crucial for DC-DC power conversion stages.5/13/2025 -
APC-E Silicon Carbide (SiC) MOSFETsDelivers high power, high frequency, and unmatched performance for demanding applications.5/6/2025 -
Infineon Technologies 700V CoolGaN™ G5 Power TransistorsDesigned to operate at high frequencies with superior efficiency, enabling ultra-fast switching.5/2/2025 -
Infineon Technologies OptiMOS™ 6 200V Power MOSFETsOffer excellent gate charge x RDS(on) product (FOM) and low on‑resistance RDS(on).4/30/2025 -
onsemi NVTFWS1D9N04XM MOSFETOffers a low RDS(on) & capacitance in an AEC-Q101 qualified, µ8FL 3.3mm x 3.3mm small package.4/28/2025