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Bench Talk for Design Engineers

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Bench Talk for Design Engineers | The Official Blog of Mouser Electronics


SiC Devices Usurp Si MOSFETs and Diodes in Servers, Motors, EVs
On Tháng Mười 1, 2018 in All, Power, Wide Bandgap by Bill Schweber
Bill Schweber
Switching devices—both transistors and diodes—based on silicon-on-carbide (SiC) are redefining capabilities of power-related circuits. These offer far better efficiency and range than today’s best silicon-only MOSFETs, IGBTs, and diodes, and are already in widespread use in top-tier data centers and server farms.
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Tagged With: Electric motors, Electric vehicles, EV, HEV, Hybrid electric vehicles, Power, Power-related circuits, SiC devices, SiC power, SiC technologies, SiC-based Diodes, SiC-based MOSFETs, Silicon-on-carbide devices, WBG, Wide Bandgap

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