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Bench Talk for Design Engineers

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Bench Talk for Design Engineers | The Official Blog of Mouser Electronics


Why SiC Devices Are Ideal for Level 3 EV Charging Applications
On Tháng Chín 24, 2019 in All, Power, Wide Bandgap by Robert Huntley
Robert Huntley
Charging an EV can be a lengthy process, however, Level 3 “fast” DC charging techniques promise much faster charging capabilities that reduce charging times to minutes instead of hours. This efficiency relies on high-speed power conversion, for which new wide-bandgap technologies are well suited.
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2272 Views
Tagged With: Electric vehicle chargers, EV charging, High efficiency EV charging, J1227, Level 3 chargers, ON Semiconductor, SiC, Silicon carbide, WBG, Wide bandgap
SiC Devices Usurp Si MOSFETs and Diodes in Servers, Motors, EVs
On Tháng Mười 1, 2018 in All, Power, Wide Bandgap by Bill Schweber
Bill Schweber
Switching devices—both transistors and diodes—based on silicon-on-carbide (SiC) are redefining capabilities of power-related circuits. These offer far better efficiency and range than today’s best silicon-only MOSFETs, IGBTs, and diodes, and are already in widespread use in top-tier data centers and server farms.
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2710 Views
Tagged With: Electric motors, Electric vehicles, EV, HEV, Hybrid electric vehicles, Power, Power-related circuits, SiC devices, SiC power, SiC technologies, SiC-based Diodes, SiC-based MOSFETs, Silicon-on-carbide devices, WBG, Wide Bandgap

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